Analysis of warpage behavior of electrochemical deposited thick copper on silicon
Konferenz: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.07.2020 - 08.07.2020 in Deutschland
Tagungsband: PCIM Europe digital days 2020
Seiten: 4Sprache: EnglischTyp: PDF
Autoren:
Sitta, Alessandro (STMicroelectronics, 95121 Catania, Italy & University of Catania, 95125 Catania, Italy)
Landi, Antonio; Cafra, Brunella; Renna, Marco; Calabretta, Michele (STMicroelectronics, 95121 Catania, Italy)
Inhalt:
The presented work shows the results of investigations with respect to the microstructural evolution and the thermo-mechanical characterization of thick Cu films (20 mm), electrochemical deposited on silicon substrates. Warpage measurements based on Phase-Shift Moir´e principle have been performed considering different temperature profiles. A theoretical explanation has been proposed to justify experimental warpage behavior, also proofed by Differential Scanning Calorimetry (DSC).