A Power Loss Modeling Approach To Mosfet Selection

Konferenz: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.07.2020 - 08.07.2020 in Deutschland

Tagungsband: PCIM Europe digital days 2020

Seiten: 4Sprache: EnglischTyp: PDF

Autoren:
Rai, Shishir (DiscoverEE Inc., USA)

Inhalt:
We demonstrate that it is not only possible but also effective to perform a comprehensive analysis that considers thousands of Mosfets available in the market and then identify the best matching devices that meet given criteria or system specifications based on power loss modeling. The power loss modeling approach considers the interaction of the Mosfet and its parasitics with the circuit and is shown to be more effective than selecting Power Mosfets based on their parameters such as on-resistance, threshold voltage, gate charge, gate capacitance or other figure of merit.