Analysis of Parasitic Elements in Power Modules Based on GaN Components
Konferenz: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.07.2020 - 08.07.2020 in Deutschland
Tagungsband: PCIM Europe digital days 2020
Seiten: 6Sprache: EnglischTyp: PDF
Autoren:
Oliveira, Joao; Loiselay, Florent (VEDECOM ITE, Versailles, France)
Morel, Herve; Planson, Dominique (Univ Lyon, INSA Lyon, Universite Claude Bernard Lyon 1, Ecole Centrale de Lyon, CNRS, AMPERE, 69621, Lyon, France)
Inhalt:
This paper aims to evaluate a GaN based power module for automotive applications. Simulations and experiments were then performed on a classical double pulse test bench. In regard to EMC, the oscillations on the Vds after device turn-off is quite important. The comparison between a simulation without considering the 3D wiring model and a simulation by considering the wiring elements is presented. The impact of the parasitic elements modelling is seen through the resonance frequencies found. Experimental results of operation of the converter are presented to validate the simulation approach.