Experimental Demonstration of Superior Vf-Err Characteristics of pin Body Diode in 1.2 kV IE-UMOSFET with a Very Short Channel Length
Konferenz: PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.11.2020 - 18.11.2020 in Shanghai, China
Tagungsband: PCIM Asia 2020
Seiten: 5Sprache: EnglischTyp: PDF
Autoren:
Kanamori, Taiga; Aiba, Ruito (Noriyuki Iwamuro, University of Tsukuba, Japan)
Harada, Shinsuke (National Institute of Advanced Industrial Science and Technology, Japan)
Yano, Hiroshi; Iwamuro, Noriyuki
Inhalt:
In this study, we investigated the Vf-Err trade-off characteristics in parasitic pin body diode of SiC trench MOSFETs by varying channel lengths of the MOSFETs. The measured results show that the trade-off characteristics can be improved when channel length is set shorter. The reason is that the shorter channel length leads to the increase of electron diffusion current and the reduction of hole injection in the on state of pin diode. As a result, stored carrier density in the n- drift region is suppressed and the reverse recovery loss of the body diode can be successfully reduced while showing the lower Vf.