4500V HiPak IGBT Module rated for 1500A and 150°C for high application
Konferenz: PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.11.2020 - 18.11.2020 in Shanghai, China
Tagungsband: PCIM Asia 2020
Seiten: 8Sprache: EnglischTyp: PDF
Autoren:
Tsyplakov, Evgeny; Andenna, Maxi; Boksteen, Boni; Chen, Makan (ABB Power Grids Switzerland Ltd., Semiconductors, A Hitachi ABB Joint Venture, Lenzburg, Switzerland)
Inhalt:
In this paper, we present a new 4.5 kV HiPak generation rated at In = 1500 A and Tj = 150 degC optimized for various applications in the high power range. The IGBT and diode chipset is based on the recent development presented