600A/1200V S3+ IGBT Module with Fine Geometry Trench IGBT Technology for EV/HEV Application

Konferenz: PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.11.2020 - 18.11.2020 in Shanghai, China

Tagungsband: PCIM Asia 2020

Seiten: 4Sprache: EnglischTyp: PDF

Xiao, Haibo; Liu, Wei; Yao, Yao; Zhang, Zhonghua; Hu, Wei; Luo, Haihui (State key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, China & Zhuzhou CRRC Times Semiconductor Co.,Ltd., Zhuzhou, China)

In this paper, a 600A/1200V IGBT module is proposed, which has been implemented using the Recessed-Emitter-Trench (RET) and Recessed-Dummy-Trench (RDT) fine pattern technology IGBT chip, pin fin base plate and direct liquid cooling structure. With the RET-RDT technology and optimized thickness and back structure, the total power loss is reduced by 20.3% and the chip size decreases 41% compared with the 5th generation trench gate IGBT. The proposed module results in an improving cooling efficiency and reducing power loss. Meanwhile, the module size has decreased by at least 27% in practical applications due to the reducing chip area and the very compact package.