An Intelligent IGBT Gate Driver IC with Temperature Compensated Gate Side Collector Current Sensing

Konferenz: PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.11.2020 - 18.11.2020 in Shanghai, China

Tagungsband: PCIM Asia 2020

Seiten: 6Sprache: EnglischTyp: PDF

Li, Rophina; Wang, Mengqi; Yu, Jingshu; Zhang, Weijia; Ng, Wai Tung (University of Toronto, Toronto, Ontario, Canada)
Sasaki, Masahiro; Kawashima, Tetsuya; Nishio, Haruhiko; Hiroyuki, Nakajima (Fuji Electric Co., Ltd, Nagano, Japan)

A temperature compensation system is proposed to improve the accuracy of a gate side collector current measurement technique for the insulated-gate bipolar transistor (IGBT). This technique requires only access to the gate terminal of the IGBT. Therefore, it can be easily integrated into a gate driver IC. The proposed intelligent IGBT gate driver IC was fabricated using TSMC’s 0.18 µm 40 V Bipolar-CMOS-DMOS (BCD) Gen-2 process to demonstrate its ability to sense the collector current within an accuracy of ±1 A from 0 to 25 A. The intelligent gate driver IC has an embedded CPU, a δ-σ modulator (DSM) analog-to-digital converter (ADC), a collector current sensing circuit, and a temperature sensing circuit. It is designed to interact with a customized IGBT device with an on-chip polysilicon pn-diode based temperature sensor.