Optimize the integrated overcurrent protection of gate driver ICs for current sense range extension
Konferenz: PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.11.2020 - 18.11.2020 in Shanghai, China
Tagungsband: PCIM Asia 2020
Seiten: 5Sprache: EnglischTyp: PDF
Preuss, Elisabeth; Eni, Emanuel-Petre; Frank, Wolfgang (Infineon Technologies AG, Neubiberg, Germany)
Gate driver ICs with integrated overcurrent protection are often based on a comparator monitoring a shunt voltage and referencing it to a relatively high sense threshold voltage. In high-current applications, this results in high-power dissipation in the shunt resistor, if the shunt value for sensing the overcurrent is adjusted to the reference voltage. Alternatively, the shunt value can be selected for a lower power dissipation, which would result in a high overcurrent limit. This paper introduces a new method for adapting the overcurrent sense capability of such gate drivers. The simple, but robust, solution enables the overcurrent detection function in high-current applications using low-resistive shunt values. Hence, it solves the inherent design trade-off of shunt resistors in high-current applications.