Using 1200 V three-phase gate driver to drive SiC MOSFETs

Konferenz: PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.11.2020 - 18.11.2020 in Shanghai, China

Tagungsband: PCIM Asia 2020

Seiten: 4Sprache: EnglischTyp: PDF

Song, Jinsheng; Raffo, Diego (Infineon Technologies Americas Corp., USA)

As third-generation power semiconductor devices, SiC MOSFETs provide superior performance, which from the perspective of switching frequency and power density, can bring power electronic systems to the next level. SOI (silicon-on-insulator)-based level-shifter gate driver ICs offer a high integration level, high performance and low cost, a good solution for driving SiC MOSFETs. This paper describes a new SOI-based 1200 V three-phase gate driver IC, and its superior performance and robustness features. SiC MOSFET-based system applications can benefit from this new gate driver IC.