Foldback Current Limiting Design and Optimization for Hot-Swap and E-Fuse ICs

Konferenz: PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.11.2020 - 18.11.2020 in Shanghai, China

Tagungsband: PCIM Asia 2020

Seiten: 5Sprache: EnglischTyp: PDF

Zhang, Wenjing (ON Semiconductor, China)

In this paper we presented a 3-stage foldback current limit method for hot-swap and E-Fuse ICs which included both of transient thermal characteristic and electro-thermal instability considerations. This method also achieved a pseudo constant power control in linear mode operation of build-in MOSFET. NCP81295 is taken as an example in this article to describe this method.