Operation of a Digitally-Controlled IGBT Gate-Driver with Advance Protection Features During Short-Circuit Type II Conditions

Konferenz: PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.11.2020 - 18.11.2020 in Shanghai, China

Tagungsband: PCIM Asia 2020

Seiten: 7Sprache: EnglischTyp: PDF

Singh, Richa; Fink, Karsten (Power Integrations GmbH, Germany)
Hao, Isco Wang (Power Integrations, China)

Power semiconductors are one of the costliest and mission-critical components in a high-power converter or inverter. Therefore, protecting Insulated Gate Bipolar Transistors (IGBTs) is an important function of the IGBT gate driver circuitry. An IGBT may be subjected to different categories of short-circuits which are split into two groups known as Type I and Type II, according to IEC 60747-9. A gate driver solution for HVDC applications, 1SP0351 by Power Integrations, is able to protect IGBTs in both cases; under either fault condition, the power module can be safely turned-off without exceeding short-circuit safe-operating-area (SCSOA).