On-State Characteristics Measurement of SiC MOSFET

Konferenz: PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.11.2020 - 18.11.2020 in Shanghai, China

Tagungsband: PCIM Asia 2020

Seiten: 5Sprache: EnglischTyp: PDF

Chai, Xiaoguang; Yuan, Tianshu; Kang, Yuhui; Ning, Puqi; Cao, Han (Institute of Electrical Engineering, Chinese Academy of Sciences, China)

To better utilize SiC MOSFETs, this paper proposes three circuits to realize the on-state characteristics measurement of SiC MOSFETs. It is proved by experiments that the impact of parasitic capacitances can be effectively suppressed by connecting a switch and a diode in series and keeping SiC MOSFETs on.