High Power Density Low Loss 3600A/1700V IGBT E2 Module with New Generation IGBT Technology

Konferenz: PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.11.2020 - 18.11.2020 in Shanghai, China

Tagungsband: PCIM Asia 2020

Seiten: 5Sprache: EnglischTyp: PDF

Ning, Xubin; Zhang, Zhonghua; Yuan, Teng; Hui, Wang; Qiang, Xiao; Qin, Rongzhen; Luo, Haihui (State key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, China & Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou, China)

This paper presents a new 3600A/1700V IGBT E2 module based on the sixth generation fine trench IGBT and new termination technology, which provides greatly improved trade trade-off relationship between the on on-state voltage drop (VCE(ON) ON)) and the turn turn-off energy loss ( EOFF ). The dummy P well and dummy trench structures were specifically optimized to achieve high turn on di/dt and turn off dv/dt controllability while maintaining low losses. Additionally, we confirmed a 175 degC maximum safe op erating junction temperature, sufficiently wide SOA, oscillation free turn turn-off, improved electromagnetic compatibility (EMC) and electromagnetic interference (EMI) performance.