New Generation 800-V SUPERFET III MOSFET for High Efficiency and Reliability in Low-Power Applications

Konferenz: PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.11.2020 - 18.11.2020 in Shanghai, China

Tagungsband: PCIM Asia 2020

Seiten: 5Sprache: EnglischTyp: PDF

Kim, Dongwook; Choi, Wonsuk; Kim, Sungnam; Kim, Edward (ON Semiconductor, Republic of Korea)

The key design challenge for an LED lighting driver and battery charger focuses on higher efficiency, lower temperature and lower cost. Quasi-Resonant (QR) flyback converters are very popular for low-power applications because of the simplicity and low cost. Low stored energy in the output capacitance; EOSS and the low switching losses of the MOSFET are critical factors needed for optimal flyback converter efficiency. The new 800-V SUPERFET(r) III MOSFET is optimized for use as a primary side switch, since it enables lower switching losses and low case temperature without sacrificing EMI performance due to its optimized design.