Optimum Selection of 650-V SUPERFET III MOSFETs for System Efficiency, EMI and Reliability

Konferenz: PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.11.2020 - 18.11.2020 in Shanghai, China

Tagungsband: PCIM Asia 2020

Seiten: 6Sprache: EnglischTyp: PDF

Kim, Sungnam; Choi, Wonsuk; Kim, Dongwook; Kim, Edward (ON Semiconductor, Republic of Korea)

High voltage Super-Junction MOSFETs were developed to satisfy specific system requirements such as improved system efficiency, reduced voltage spikes, high EMI performance, system reliability and cost effectiveness in several application as shown in Fig. 1. Often, highest possible system efficiency is the main requirement for high power applications such as server / telecom power supply and Industrial power supplies. So, low RDS(ON) and fast switching performance with low switching losses are the major characteristics offered by the latest generation Super-Junction MOSFETs. However, in the case of general power supply applications with middle and low power ratings such as travel adapter, LED lighting, ATX power and consumer power supplies, an optimized MOSFET not only focuses high system efficiency but also better EMI performance. Additionally, fast reverse recovery body diode characteristics are required for resonant converter topologies in order to improve system reliability during start-up, output short mode or any abnormal conditions [1]. In order to offer all of these various system requirements, ON Semiconductor offers three versions of the SUPERFET(r) III MOSFET such as FAST, EASY Drive and FRFET(r) version. This paper shows comparison results with the parameters required by system application in order to select the MOSFET optimized for the system focusing point.