Mitigation of IGBT Gate Oscillation during Short Circuit through Module Layout Improvement
Konferenz: PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.11.2020 - 18.11.2020 in Shanghai, China
Tagungsband: PCIM Asia 2020
Seiten: 3Sprache: EnglischTyp: PDF
Autoren:
Ke, Haotao; Teng, Yuan; Qin, Guangyuan; Feng, Huiyu; Yu, Wei; Peng, Yongdian; Tang, Longgu (Zhuzhou CRRC Times Semiconductor Co., Ltd., China)
Inhalt:
Gate oscillation during IGBT module short circuit is studied in this work. The distributions of carriers and electric field are simulated through Sentaurus TCAD. Mix-mode simulation is used for identifying influence of package parasitic on the gate oscillation. Elimination of the gate oscillation is achieved through module layout improvement.