Mitigation of IGBT Gate Oscillation during Short Circuit through Module Layout Improvement

Konferenz: PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.11.2020 - 18.11.2020 in Shanghai, China

Tagungsband: PCIM Asia 2020

Seiten: 3Sprache: EnglischTyp: PDF

Ke, Haotao; Teng, Yuan; Qin, Guangyuan; Feng, Huiyu; Yu, Wei; Peng, Yongdian; Tang, Longgu (Zhuzhou CRRC Times Semiconductor Co., Ltd., China)

Gate oscillation during IGBT module short circuit is studied in this work. The distributions of carriers and electric field are simulated through Sentaurus TCAD. Mix-mode simulation is used for identifying influence of package parasitic on the gate oscillation. Elimination of the gate oscillation is achieved through module layout improvement.