Efficiency and Robustness Analysis of a Novel SiGe Diode Utilized in a High Frequency 48 V/12V DC/DC Converter

Konferenz: PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.11.2020 - 18.11.2020 in Shanghai, China

Tagungsband: PCIM Asia 2020

Seiten: 6Sprache: EnglischTyp: PDF

Aneissi, Ali; Meissner, Michael; Kloetzer, Sebastian; Hoffmann, Klaus F. (Helmut Schmidt University, Germany)
Behtash, Reza; Fahlbusch, Sebastian; Fischer, Jan (Nexperia Germany GmbH, Germany)

The recent utilization of high switching frequencies in power electronics due to the availability of wide bandgap devices has significantly affected automotive converter designs. In this paper a comprehensive efficiency analysis of a novel 120V / 3A silicon-germanium (SiGe) based diode implemented in a 48V / 12V DC/DC converter is presented. For this purpose, a converter with low stray inductance operated by a 100V e-mode GaN-HEMT with high di/dt transients up to 1 A/ns was designed. To further complement the analysis, the robustness in the form of surge current stability was investigated. The new SiGe diode is compared with four other diodes which are specified for a similar operation range and have equal packaging but are comprised of different layer structures, namely Trench Schottky, Planar Schottky and pn diodes. It is demonstrated that for typical operating points the bipolar SiGe diode can outperform unipolar devices in the presence of high speed switching.