GaN, SiC or Silicon Mosfet – A Comparison Based On Power Loss Calculations

Konferenz: PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.11.2020 - 18.11.2020 in Shanghai, China

Tagungsband: PCIM Asia 2020

Seiten: 9Sprache: EnglischTyp: PDF

Rai, Shishir (DiscoverEE Inc., USA)

When compared to the Silicon power Mosfets, it is well known that GaN and SiC power devices have superior figure of merit. In an effort to characterize how improved figure of merit translates to lower power loss, we modeled the power loss of Silicon, SiC and GaN power devices available in the market from key manufacturers for a power converter operating at 400 V / 15 A and 800 V / 7.5 A voltage and current levels with switching frequencies ranging from 1-200 kHz. This work will provide key insights to hardware engineers on which material and devices to consider for their application.