SiC Power Device Hammer and Burn-In System
Konferenz: PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.11.2020 - 18.11.2020 in Shanghai, China
Tagungsband: PCIM Asia 2020
Seiten: 5Sprache: EnglischTyp: PDF
Autoren:
Ye, Zhong; Yang, Hailong (Inventchip Technology, China)
Wang, Zhenye (Shanghai University, China)
Inhalt:
The outstanding switching characteristics of SiC MOSFETs have enabled the power devices in many high-end applications. The industry adoption of SiC MOSFETs has accelerated significantly in the past couple years and outpaced the creation of SiC JEDEC standard ( JC-70.2). Currently, manufacturers basically follow Si MOSFET JEDEC standards to qualify SiC MOSFETs with supplemental tests to ensure good device reliability. Among them, application-oriented supplemental tests are important ones. This paper shares a production-grade application test system design. The system emulates real converter operations, including hard switching and soft switching, and stresses power devices at set conditions for device development and product screening purposes. The system uses a power cycling topology to minimize energy consumption.