Next Generation of Power Electronics Module Packaging

Inhalt:
To improve the efficiency in modern cars on the way to electro mobility the power density has to increase without limitations on performance and reliability. To realize these requirements many ingredients are necessary taken into account. New module concepts with wide gap semiconductors are the best candidates to face these challenges. First priority is on thermal management and handling of high currant. This requests reduction of inductance, switching losses, On-state losses of the power switches to drive the efficiency of the power modules in the upper 95% range. The implementation of power semiconductors like MOSFETS, IGBTs or diodes directly into the printed circuit board (PCB) is a very promising approach to fulfill these requirements. AT&S successfully used the expertise with its ECP (Embedded Components Packaging) technology for the implementation of efficient power packages and modules. This made it possible to reduce the space required for power packages by up to 50% with correspondingly higher power density. In addition, it showed that very good results are achievable in terms of switching behavior, heat removal and power cycling robustness. The speech will show different approaches (different module concepts) to realize these technical targets using efficient cooling concepts combined with buildup concepts and designs to achieve lowest loop inductance with SiC and GaN MOSFETS. Wide gap semiconductors embedded in PCB with high currant capability, using sinter interconnection and micro via as a replacement to soldering and wire bonding, will enable multi-phase power modules with improved power efficiency.