Fast SiC-MOSFET Switch with Gate Boosting Technology

Konferenz: PCIM Europe digital days 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
03.05.2021 - 07.05.2021 in Online

Tagungsband: PCIM Europe digital days 2021

Seiten: 7Sprache: EnglischTyp: PDF

Autoren:
Sack, Martin; Hochberg, Martin; Herzog, Dennis; Mueller, Georg (Karlsruhe Institute of Technology, Institute for Pulsed Power and Microwave Technology, Germany)

Inhalt:
Gate boosting enables a considerable increase in switching speed for commercially available MOSFETs. In the present work, a switch comprising three SiC-MOSFETs in parallel configuration has been combined with a gate drive circuit employing a gate boosting technology based on a series capacitance and increased driver voltage. The gate driver uses GaN-HEMTs in a half-bridge topology. The MOSFET switch has been tested in pulsed operation with a resistive load up to 1 kV and 90 A at the load. Thereby, the capacitance and supply voltage of the gate driver have been varied. A rise time of 3.3 ns at the load has been achieved.