A High-Speed and High-Accuracy SiC MOSFET Model for Simulating Practical Power Circuits

Inhalt:
A new silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) model was developed that enables system-level circuit simulations to be executed with practical computation time. To increase simulation speed, a simple equation was created to accurately represent the drain current (Id)–drain-source voltage (Vds) characteristics of a SiC MOSFETs in the high-Vds and high-Id region. This novel device model accurately reproduced the switching waveforms of SiC MOSFETs measured in an inductive load circuit. Additionally, the model was used to simulate the current and voltage waveforms of a three-phase inverter. Results indicate that this new model reduced computation time by one-tenth compared with that of the conventional PSpice model.