A High Precision Dynamic Characterization Bench with a Current Collapse Measurement Circuit for GaN HEMT Operating at 175°C

Konferenz: PCIM Europe digital days 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
03.05.2021 - 07.05.2021 in Online

Tagungsband: PCIM Europe digital days 2021

Seiten: 8Sprache: EnglischTyp: PDF

Autoren:
Van Sang, Nguyen; Bier, Anthony; Escoffier, Rene; Catellani, Stephane; Martin, Jeremy; Gillot, Charlotte (CEA Tech, France)

Inhalt:
This work is dedicated to the dynamic behavior of a GaN HEMT thanks to a multi pulse tester (MPT) bench dedicated to the current collapse characterizations at high temperatures (up to 175deg C) by using a focused infrared beam while keeping the other electronic devices operating conditions close to room temperature. The bench is equipped with another inverter leg, which aim is to control the soaking time of the device under test (DUT). A circuit implementing high slew rate operational amplifiers allows measuring precisely the voltage drop across the GaN HEMT several nanoseconds after the end of the GaN HEMT turn-on. The MPT bench and the experimental results are presented in this work.