A Flexible Test Setup for Long-Term Dynamic Characterization of SiC MOSFETs under Soft- and Hard-Switching Conditions

Konferenz: PCIM Europe digital days 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
03.05.2021 - 07.05.2021 in Online

Tagungsband: PCIM Europe digital days 2021

Seiten: 8Sprache: EnglischTyp: PDF

Autoren:
Philipps, Daniel A.; Peftitsis, Dimosthenis (Norwegian University of Science and Technology, Norway)

Inhalt:
Due to the superior material characteristics of Silicon Carbide (SiC), the use of SiC MOSFETs enables higher system power density or efficiency depending on the design perspective. To identify the improvement potential in the operation of a device, precise characterization is crucial. This paper presents a flexible and easily reconfigurable test setup to characterize the dynamic behavior of SiC MOSFETs under both hard- and soft-switching conditions at blocking voltages of up to 900 V and currents up to 300 A. It features a balancing circuit that enables long term test operation in both switching modes and as a future power cycling test setup.