A Novel Trench SiC-MOSFETs Fabricated by Multiple-Ion-Implantation into Tilted Trench Side Walls (MIT2-MOS)
Konferenz: PCIM Europe digital days 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
03.05.2021 - 07.05.2021 in Online
Tagungsband: PCIM Europe digital days 2021
Seiten: 5Sprache: EnglischTyp: PDF
Autoren:
Sugawara, Katsutoshi; Kagawa, Yasuhiro; Suekawa, Eisuke; Terasaki, Yoshiaki (Power Device Works, Mitsubishi Electric Corp, Fukuoka, Japan)
Fukui, Yutaka; Tanaka, Rina; Adachi, Kohei; Tomohisa, Shingo; Miura, Naruhisa (Advanced Technology R&D Center, Mitsubishi Electric Corp., Hyogo, Japan)
Inhalt:
We have developed the new trench gate SiC MOSFET(MIT2-MOS) applying bottom p-well region (BPW), sidewall connection region (SC) between p-well (PW) and BPW, and JFET doping region (JD). The structure has been fabricated by utilizing multiple ion implantations with tilted beam angle after trench etching. MIT2-MOS demonstrates markedly low Ron,sp of 1.9 mOmegacm2 at Vth of 4.1 V with breakdown voltage of 1500 V. The stability of Ron,sp and switching losses after the gate stress is also evaluated. Vth shifted about +0.23 V, Ron,sp increases below +2%, and total switching loss (Eon+Eoff) is stable.