All SiC Module with 1700V Rated 2nd Generation Trench Gate SiC-MOSFETs

Konferenz: PCIM Europe digital days 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
03.05.2021 - 07.05.2021 in Online

Tagungsband: PCIM Europe digital days 2021

Seiten: 6Sprache: EnglischTyp: PDF

Autoren:
Theisen, Alexander (Fuji Electric Europe GmbH, Germany)
Takasaki, Aiko; Kani, Tomoyuki; Okumura, Keiji; Maruyama, Rikihiro; Kusunoki, Yoshiyuki; Kobayashi, Yasuyuki (Fuji Electric Co., Ltd., Japan)

Inhalt:
Recently, the demand for downsizing and higher efficiency of power conversion systems has been increasing in order to realize a low carbon society. For this reason, enhancing power density of power semiconductor modules is an important factor to achieve this goal. We developed electrical characteristics for a newly developed 1700V/300A All SiC module with 2nd generation trench gate SiC-MOSFETs (Silicon Carbide, Metal Oxide Semiconductor Field Effect Transistors). It has been demonstrated that a significant increase of output power in power conversion units could be achieved by using the All SiC module compared with conventional Si-IGBT (Silicon, Insulated Gate Bipolar Transistors) modules.