Advantages of SiC MOSFETs in High Frequency Bidirectional PFC Converters for Industrial Applications

Konferenz: PCIM Europe digital days 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
03.05.2021 - 07.05.2021 in Online

Tagungsband: PCIM Europe digital days 2021

Seiten: 5Sprache: EnglischTyp: PDF

Autoren:
Aiello, Giuseppe; Gennaro, Francesco (STMicroelectronics, Italy)
Cacciato, Mario (DIEEI University of Catania, Italy)

Inhalt:
The request of Active Front End (AFE) converters with bidirectional functionalityis growing at high rate. This is due to the fast development of smart charging infrastructures related to Car Electrification process and V2G applications inside the Smart Grid. Such power converters are required to provide high performance with high efficiency and overall low complexity. A viable approach to this purpose is the introduction of SiC power devices. In this paper, the use of SiC power MOSFETs in high frequency PFC converters is analyzed in typical three-phase applications, in order to show the benefit of such solutions. In particular, a 2-level three-phase full bridge (B6) and a 3-level NPC2 (3L-TType) converters are considered and a comparison with silicon power semiconductors is carried under different switching frequency in the both bidirectional operating modes.