Influence of Internal Semiconductor Processes on Errors at Measurement of Thermal Resistance
Konferenz: PCIM Europe digital days 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
03.05.2021 - 07.05.2021 in Online
Tagungsband: PCIM Europe digital days 2021
Seiten: 5Sprache: EnglischTyp: PDF
Autoren:
Chen, Weinan; Lutz, Josef; Basler, Thomas (Chemnitz University of Technology, Germany)
Deng, Erping (Chemnitz University of Technology, Germany & North China Electric Power University, State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, China)
Inhalt:
The surface temperature is underestimated at the determination of Zth of IGBTs with the VCE (T) method. This is of relevance for application since the thermal resistance Rth will be measured as too low. For diodes with the pn-junction on the topside, this error is not given. More importantly, the error due to the delay time can be corrected by the model of the simulation of the thermal network with ANSYS or a simplified Cauer network, but not the error due to the internal semiconductor processes.