Second Generation BIGT Chip Advancing the StakPak Platform
Konferenz: PCIM Europe digital days 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
03.05.2021 - 07.05.2021 in Online
Tagungsband: PCIM Europe digital days 2021
Seiten: 7Sprache: EnglischTyp: PDF
Autoren:
Boksteen, Boni; Prindle, Daniel; Dugal, Franc; Vitale, Wolfgang Amadeus; Tsyplakov, Evgeny; Botan, Virgiliu; Paques, Gontran (Hitachi ABB Power Grids, Semiconductors, Switzerland)
Inhalt:
In this paper, we present the new 5.2kV StakPakgeneration based on an improved BIGT2 chip. The chip is a reverse conducting or Bimode IGBT optimized for low conduction loss, providing 30% improvement in current handling capability. The BIGT2 is based on the rugged Enhanced Planar (EP) IGBT cell and pilot anode design of its predecessor. The paper describes the design modifications implemented to achieve increased capability in both IGBT (1st quadrant) and Diode (3rd quadrant) mode while maintaining the same StakPak platform footprint.