Power Cycling SiC MOSFETs: Study on Threshold Voltage Behavior and Solder-Void Decrease
Konferenz: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2022 - 12.05.2022 in Nürnberg, Germany
doi:10.30420/565822040
Tagungsband: PCIM Europe 2022
Seiten: 7Sprache: EnglischTyp: PDF
Autoren:
Mengotti, Elena; de Medeiros, Helton Goncalves; Bianda, Enea; Baumann, David; Schlottig, Gerd (ABB Switzerland Ltd, Research Center, Switzerland)
Jormanainen, Joni; Ingman, Jonny (ABB Drives Oy, Finland)
Furrer, Roman; Rheingans, Bastian (Empa, Switzerland)
Ziemann, Thomas; Tiwari, Shweta; Grossner, Ulrike (Advanced Power Semiconductor Laboratory, ETH Zurich, Switzerland)
Inhalt:
In this work, for several SiC MOSFETs manufacturers and technologies (planar and trench), we monitor the threshold voltage hysteresis as well as the concentration of voids in the solder die attach area as a function of power cycling number. The results show that, while the semiconductor aging is recognizable in increasing Tj,max, the aging does not have a strong impact on the threshold voltage and the DeltaVTH hysteresis does not change significantly upon aging. For Pb-rich solders, a reduction of the solder-voids area fraction with increasing power cycles was observed.