Real-Time Adjustable Voltage-Source Gate Driver With Resistance Emulation for Automated SiC MOSFET Characterization
Konferenz: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2022 - 12.05.2022 in Nürnberg, Germany
doi:10.30420/565822050
Tagungsband: PCIM Europe 2022
Seiten: 5Sprache: EnglischTyp: PDF
Autoren:
Wurst, Helge B.; Blank, Thomas (Institute for Data Processing and Electronics, Karlsruhe Institute of Technology, Germany)
An, Bao Ngoc (Schaeffler Automotive Buehl GmbH & Co. KG, Germany)
Inhalt:
This paper presents the design and construction of a fully parametric, digitally controllable gate driver for automated SiC MOSFET characterization. The driver approximates resistances from 1.2 to 10 Ohm using arrays of split-output gate drivers, each with one of two outputs connected through a resistor. The complete driver enables automated double-pulse-testing of 1200 V SiC MOSFETs with up to 100 kV/mus CMTI. Parameters span +10 to +21 V on-state, -2 to -5.5 V off-state voltages and 15 discrete resistances with independent RON and ROFF. Finally, a case study with TO247-3 and TO247-4 MOSFETs elucidates gate loop inductance impacts.