Special Effects of Junction Temperature Measurement based on the Internal Gate Resistance

Konferenz: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2022 - 12.05.2022 in Nürnberg, Germany


Tagungsband: PCIM Europe 2022

Seiten: 10Sprache: EnglischTyp: PDF

Gleissner, Michael; Bakran, Mark-M. (University of Bayreuth, Department of Mechatronics, Center of Energy Technology, Germany)

This paper discusses two problems and possible solutions for measuring the junction temperature of semiconductor switches using the internal gate resistor as temperature sensitive electric parameter. On the one hand, the dependency of the gate impedance on the blocking voltage and the negative gate voltage is analyzed, which can influence the temperature measurement. On the other hand, neighboring switching phases in converter operation can cause faulty temperature measurement values due to EMI coupling in the measuring circuit. An elimination method for both effects is presented.