650-V and 1200-V SiC MOSFETs with Low RonA and Strong Reduction in Switching Losses
Konferenz: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2022 - 12.05.2022 in Nürnberg, Germany
doi:10.30420/565822077
Tagungsband: PCIM Europe 2022
Seiten: 6Sprache: EnglischTyp: PDF
Autoren:
Furukawa, Masaru; Shimizu, Yasuhiro; Tanaka, Katsuhisa; Kotani, Yosuke; Kobayashi, Masakazu; Kono, Hiroshi; Hayakawa, Hideki (Toshiba Electronic Devices & Storage Corporation, Japan)
Tchouangue, Georges (Toshiba Electronics Europe GmbH, Germany)
Inhalt:
Toshiba’s third-generation silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) technology was initially developed for 3.3-kV class chips. That chip technology is adopted and optimized for 650-V and 1200-V class products. Compared with second-generation SiC MOSFETs released in 2019, RonA is reduced by 43% and Ron x Qgd is drastically reduced by 80%. In addition, Vth is designed at 4 V to ease gate driving and to prevent malfunctions due to high speed switching. Figure 1 shows a list of third-generation SiC MOSFETs in the 650- V and 1200-V classes that are scheduled for release. In addition, high reliability was realized by optimizing the gate process.