Challenges of Paralleling 3.3 kV SiC MOSFET Modules in HVDC Converter Submodules
Konferenz: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2022 - 12.05.2022 in Nürnberg, Germany
doi:10.30420/565822109
Tagungsband: PCIM Europe 2022
Seiten: 10Sprache: EnglischTyp: PDF
Autoren:
Bergmann, Lukas; Bakran, Mark-M. (Chair of Mechatronics, Center for Energy Technology (ZET), University of Bayreuth, Germany)
Wahle, Marcus (Siemens Energy, Germany)
Inhalt:
This work presents the challenges of paralleling 3300 V Silicon carbide MOSFET power modules. Based on a static device characterization, the static current derating depending on conduction variation and parallel number of modules is calculated. Furthermore, an investigation on dynamic imbalance of switching losses due to device parameter variation is realized based on a parametrized simulation model. Finally, a comparison of three different approaches of external module gate loop designs is presented to find the best solution.