Comparison of Dissipation Loss Reduction Rates of 1.2kV and1.7kV All-SiC Modules Against Si-IGBT Modules
Konferenz: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2022 - 12.05.2022 in Nürnberg, Germany
doi:10.30420/565822114
Tagungsband: PCIM Europe 2022
Seiten: 6Sprache: EnglischTyp: PDF
Autoren:
Bradel, Ben (Fuji Electric Europe GmbH)
Iwamoto, Susumu; Takasaki, Aiko; Uchida, Takafumi; Isozaki, Makoto; Kusunoki, Yoshiyuki; Kobayashi, Yasuyuki (Fuji Electric Co., Ltd., Japan)
Inhalt:
In recent years, higher efficiency has been required for power electronics systems in order to realize a decarbonized society. For this situation, All-SiC (Silicon Carbide) modules are expected as one of the candidates for the drastic power dissipation reduction of voltage source PWM (Pulse Width Modulation) inverters. In this paper, the power dissipation reductions of 1200 V and 1700 V rated All-SiC modules against Si-IGBT (Silicon-Insulated Gate Bipolar Transistor) modules for PWM inverters under the condition of the same switching speed have been compared. It reveals that the power dissipation reduction of the higher voltage All-SiC module is larger and the high voltage All-SiC module is suitable for high efficiency power conversion systems.