Precise Determination of Dynamic RDSon in AlGaN/GaN Power HEMTs under Soft Switching Condition

Konferenz: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2022 - 12.05.2022 in Nürnberg, Germany

doi:10.30420/565822138

Tagungsband: PCIM Europe 2022

Seiten: 8Sprache: EnglischTyp: PDF

Autoren:
Goller, Maximilian; Thoenelt, Nick; Li, Gengqi; Lutz, Josef; Basler, Thomas (TU Chemnitz, Germany)
Schwabe, Christian

Inhalt:
The dynamic on-state resistance RDS,on phenomenon is a key challenge in AlGaN/GaN high electron mobility transistors (HEMTs) for high efficient power conversion. The increase of the on-state resistance is not only leading to increased losses, but also represents a reliability risk for power conversion systems. In this paper, a setup for high switching speeds in a pulsed I-V configuration is presented. Investigations in off-state preconditioning time and repetitive measurements are performed for both Schottky and ohmic p-GaN enhancement type devices. The results illustrate that the dynamic RDS,on features different tendencies depending on the applied conditions. At high bias and long off-state time, no increase of RDS,on is observed. The maxima of RDS.on are found at different drain bias for Schottky p-GaN devices and gate injection transistors (GITs).