Research of SiO2Thin Film Deposition by PECVD in SiC Power Device Manufacturing
Konferenz: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2022 - 12.05.2022 in Nürnberg, Germany
doi:10.30420/565822152
Tagungsband: PCIM Europe 2022
Seiten: 5Sprache: EnglischTyp: PDF
Autoren:
Yang, Songlin; Li, Kongjing; Wang, Yangang (Dynex Semiconductor Ltd, Lincoln, UK)
Li, Chengzhan; Luo, Haihui (Zhuzhou CRRC Times Semiconductor Ltd, Zhuzhou, China)
Inhalt:
A series of amorphous silicon dioxide (SiO2) films were deposited by the technics of Plasma Enhanced Chemical Vapor Deposition (PECVD), during which chamber pressure, SiH4 and N2O gas flow, spacing were altered in turn, while keeping other parameters unchanged. Film thickness (hence the deposition rate) and refractive index (RI) was measured by ellipsometer, and the influence of above parameters on film qualities was qualitatively discussed according to the results. In addition, a suitable deposition condition for relatively good SiO2 film (high uniformity and suitable RI) was achieved, which is for the standard of SiC SBD.