Understanding the Switching Behavior of Fast SiC MOSFETs

Konferenz: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2022 - 12.05.2022 in Nürnberg, Germany

doi:10.30420/565822153

Tagungsband: PCIM Europe 2022

Seiten: 8Sprache: EnglischTyp: PDF

Autoren:
Sochor, Paul; Huerner, Andreas; Sun, Qing; Elpelt, Rudolf (Infineon Technologies AG, Germany)

Inhalt:
The switching behavior of fast SiC MOSFETs is characterized by many influences and interdependencies that have a significant impact the device performance. Circuit designers with a good understanding of device behavior can benefit from enhanced device performance by optimizing their power circuits. This paper discusses key aspects of the switching behavior of fast SiC MOSFETs with regard to device characteristics, operating conditions and external circuitry. It explains the main influences of switching losses, and identifies important aspects of device behavior and usage that can significantly improve the switching performance of SiC MOSFETs in power circuits.