Static and Dynamic Measurements for GaN Integrated Switches

Inhalt:
In this article, static and dynamic measurements based on normally-off HEMTs with P-GaN technology are presented. This intends to highlight characterization boards for a half-bridge device composed of two GaN transistors integrated into one package. The first part describes boards which characterize the static behavior of the switching leg (I-V characteristics of the GaN component, RON parameter, parasitic capacitances, gate charge and charge values). The second part presents the dynamicresponse of a GaN transistor in ZVS application in terms of peak current, switching frequency and case temperature.