A High-Speed and High-Accuracy Power Device Waveform Simulation Method
Konferenz: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2022 - 12.05.2022 in Nürnberg, Germany
doi:10.30420/565822171
Tagungsband: PCIM Europe 2022
Seiten: 6Sprache: EnglischTyp: PDF
Autoren:
Murata, Makoto; Imamura, Asuma; Fujita, Shimpei; Nakamura, Yohei; Kuroda, Naotaka; Yamaguchi, Atsushi (ROHM Co., Ltd., Japan)
Filsecker, Felipe (ROHM Semiconductor GmbH, Germany)
Inhalt:
This paper presents a method for accurately simulating switching waveforms of silicon carbide (SiC) MOSFETs. To improve the simulation accuracy, a detailed simulation circuit is used which not only applies device simulation models but also includes the parasitic inductance of the package and printed circuit board (PCB) patterns. SiC MOSFETs evaluation board and its simulation circuit were implemented, and the actual and simulated waveforms were compared. By using electromagnetic field analysis adding the mutual inductance between terminals to the self-inductance, the accuracy of the switching waveforms was greatly improved.