Hardware Development of an Active Gate Driver to Mitigate Oscillations of SiC MOSFET Switching Process

Konferenz: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2022 - 12.05.2022 in Nürnberg, Germany


Tagungsband: PCIM Europe 2022

Seiten: 10Sprache: EnglischTyp: PDF

Walter, Michael; Li, Zheming; Maier, Robert W.; Bakran, Mark-M. (University of Bayreuth, Department of Mechatronics, Center of Energy Technology, Germany)

This paper propose a hardware design of an active gate driver to mitigate oscillations of SiC-MOSFET switching process. The switching losses can be decreased by increasing the switching speed, which inevitably also causes higher oscillations. This relation leads to a trade-off between low switching losses on the one hand and low oscillation/EMI on the other hand. This trade-off can be optimized by active gate drivers. To achieve this goal, an active gate driver is developed. It is based on a two-stage gate control with switchable gate resistances and utilizes the closed-loop control strategy to adjust the gate control parameter.