Design of Digital Logic Gate Based on Memristor

Konferenz: EMIE 2022 - The 2nd International Conference on Electronic Materials and Information Engineering
15.04.2022 - 17.04.2022 in Hangzhou, China

Tagungsband: EMIE 2022

Seiten: 8Sprache: EnglischTyp: PDF

Autoren:
Pan, Nan; Li, Lei; Zhang, Bolin (Electronic Engineering College of Heilongjiang University, Harbin, China)

Inhalt:
In this paper, a new CMOS-memristor hybrid structure called 3T1M is proposed. Based on this structure, a memorycomputing integration of the AND gate, a memory-computing integration of the OR gate, a memory-computing integration of the universal logic gate, and a memory-computing integration of the universal logic gate with parity bit are presented. By theoretical analysis and simulation verification, these logic gate structures can complete Boolean logic operations, store and readout functions of input data, and make the function of a gate circuit that can both calculate and store data. They can all be compatible with CMOS circuits. Through LTspice simulation, the theoretical feasibility of the proposed design is proved. In these structures, the memristor acts as both an operation device and a storage device, thus accomplishing the integration of storage and calculation, saving the circuit area and solving the problem that MRL logic circuits carry out Boolean logic operations without storing and reading data.