Integrated Multi-Stage Cascode Structure for Lateral High-Voltage GaN Power Transistors
Konferenz: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09.05.2023-11.05.2023 in Nürnberg, Germany
doi:10.30420/566091001
Tagungsband: PCIM Europe 2023
Seiten: 8Sprache: EnglischTyp: PDF
Autoren:
Reiner, Richard; Moench, Stefan; Basler, Michael; Waltereit, Patrick; Mueller, Stefan; Mikulla, Michael; Quay, Ruediger (Fraunhofer IAF, Fraunhofer Institute for Applied Solid State Physics, Freiburg, Germany)
Inhalt:
This work demonstrates an integrated multi-stage cascode structure for lateral high-voltage transistors in a GaN-on-SiC power technology. The functional principal, the intrinsic device structure and the extrinsic chip layout is presented and is investigated. The fabricated device demonstrator features a breakdown measurement up to 1000 V, an maximum on-state current of ID,MAX = 10 A, and on-state resistance of about RON = 1 Ω.