Prediction of the Bipolar Degradation in 1200V 4H-SiC MOSFETs by Inspection in Device Fabrication Process
Konferenz: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09.05.2023-11.05.2023 in Nürnberg, Germany
doi:10.30420/566091021
Tagungsband: PCIM Europe 2023
Seiten: 5Sprache: EnglischTyp: PDF
Autoren:
Ishibashi, Kazuya; Kagawa, Yasuhiro; Furukawa, Akihiko (Power Device Works, Mitsubishi Electric Corp., Japan)
Amishiro, Hiroyuki; Tanaka, Takanori; Tomita, Nobuyuki; Imai, Akifumi; Nakao, Yukiyasu; Watanabe, Hiroshi (Advanced Technology R&D Center, Mitsubishi Electric Corp., Japan)
Inhalt:
Bipolar degradation is a well-known key issue that should be taken into account in silicon carbide (SiC) bipolar devices. The electron-hole recombination under bipolar operation mode induces generation and expansion of stacking faults (SFs), and it causes an increase of forward voltage and on-resistance. We found the feature of the so-called “killer defect” which induces the bipolar degradation such as micropipes from surface and photoluminescence (PL) inspections in device fabrication process, and developed a high-precision predictive method for the bipolar degradation without using current stress tests.