Comparison of Simulation Methods to Study the SwitchingTransients of GaN Transistors

Inhalt:
To take full advantage of GaN transistors and optimize the converter design to achieve high frequency and high efficiency operations, the switching transitions of GaN transistors together with parasitic circuit elements should be comprehensively studied. Simulation can save time and resources and allows for predictions for improved hardware designs. This paper presents and compares three simulation methods to study the switching transients of GaN transistors: A) The transistors are simulated using SPICE models, while the layout-related parasitic circuit elements are modeled as physics-based lumped elements. B) Transistor SPICE models are combined with a netlist derived from 3D FEA layout models accounting for parasitic effects, whose structure is arbitrary and parameters do not correspond to actual physical values, and C) a transient co-simulation of transistor SPICE models and 3D FEA layout models is performed. A methodology to ensure reliable simulations results is presented. Further, the feasibility of the three simulation methods is evaluated by experimental results and a comparative analysis.