Development of Ag-free active metal brazing filler for manufacturing copper-Si3N4 substrates

Inhalt:
Toshiba Materials Co., Ltd. has enabled the manufacture of insulating circuit substrates by developing silver free brazing (SFB) technology for bonding copper to silicon nitride. In active metal brazing, the reaction of titanium (Ti) with ceramics is important for reliable brazing. Therefore, we examined the composition of a SFB filler focusing on the Ti content and found that it was possible to form a dense and continuous interfacial reaction layer similar to a conventional Ag alloy filler. The SFB substrate also had suitable properties for practical use.