RC-IGBT Module suitable for Motion Control

Inhalt:
In this paper, power modules for motion control applications in industrial uses are evaluated. New samples employ our latest 3rd generation RC-IGBT (Reverse Conducting – Insulated Gate Bipolar Transistor) chips that integrate an IGBT and a diode into a single chip. The new RC-IGBT has features both of low-loss and low-thermal resistance. The low-loss has been realized by thin wafer technology, carrier stored trench bipolar transistor structure and process optimization. The low-thermal resistance has been realized by optimization of IGBT/diode layout in the RC-IGBT. The test sample equipped with the new RC-IGBTs improves electrical characteristics and has good thermal performance. As a consequence, 18 % increase in current output and 36 % reduction in temperature ripple compared to conventional IGBT modules has been simulated for dynamic operation profiles. This result contributes to improvement of output current performance and also the power cycle lifetime. Hence the new RC-IGBTs are especially suitable for motion control applications that require high current handling capability such as inverters, servo drives and robotics.