Fabrication Refinements and Evaluation of a Wirebond-Less Multi-Chip Power Module with 13 kV SiC Devices

Inhalt:
This paper proposes refined packaging techniques to improve the yield of a 13 kV silicon carbide (SiC) MOSFET power module. The refinements explicitly focus on molybdenum (Mo) post interconnects, stacked direct-bonded aluminum (DBA) substrates, and silver (Ag) sinter die-attach for wirebond-less multi-chip power modules (MCPMs). Refinement is necessary due to the novel fabrication challenges introduced by these advanced packaging technologies. The proposed refinements increase the solder bond strength by 10.5%, reduce post-height variation by 97.7%, and reduce the bond-line resistance by 99.8%. Double pulse tests (DPTs) of the module with the improved packaging procedure show transition times of 30 ns and 130 ns, respectively, during turn-on and turn-off.