Characterization of Si-IGBTs in ZCS for EV Charger Applications
Konferenz: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09.05.2023-11.05.2023 in Nürnberg, Germany
doi:10.30420/566091100
Tagungsband: PCIM Europe 2023
Seiten: 8Sprache: EnglischTyp: PDF
Autoren:
Race, Salvatore; Kovacevic-Badstuebner, Ivana; Ziemann, Thomas; Grossner, Ulrike (Advanced Power Semiconductor Laboratory, ETH Zurich, Zurich, Switzerland)
Cotorogea, Maria; Biswas, Arnab; Niedernostheide, Franz-Josef (Infineon Technologies AG, Neubiberg, Germany)
Riegler, Lukas; Tinivella, Riccardo (BRUSA HyPower AG, Buchs, Switzerland)
Inhalt:
This paper presents the characterization of silicon IGBT (Si-IGBTs) in a fast zero-current switching (ZCS) operation of a single-stage, 3-phase, 11 kW resonant converter for electric vehicle (EV) charging applications. ZCS prevents a long turn-off current tail in Si-IGBTs during hard switching. Thanks to the developed converter topology, a switching frequency fsw of up to 70 kHz can be reached with a ZCS resonant converter based on Si-IGBTs. Compared to the ZCS characterization data of Si-IGBTs in literature, i.e. fsw,max = 20 kHz, this paper extends the characterization of reverse-conducting (RC) Si-IGBTs for fsw = 50 − 70 kHz, supported by electrical measurements and numerical device simulations.