Active Clamping for SiC MOSFET’s Body Diode During Reverse-Recovery
Konferenz: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09.05.2023-11.05.2023 in Nürnberg, Germany
doi:10.30420/566091107
Tagungsband: PCIM Europe 2023
Seiten: 7Sprache: EnglischTyp: PDF
Autoren:
To, Pham Ha Trieu; Eckel, Hans-Guenter (University Rostock, Germany)
Inhalt:
The behavior of SiC MOSFET and its body diode during the reverse-recovery process is not well covered in literature [1-3], especially when parasitic turn on and active clamping involve. This paper explains how the SiC MOSFET and its body diode behave in this scenario based on the experimental measurements. By understanding the mechanism, the paper shows that the overvoltage on the body diode during reverse-recovery can be clamped and the turn-on losses, switching oscillation can also be optimized by changing the turn-off gate voltage and the turn-on gate resistor.